Static random access memory architecture

ABSTRACT

An architecture for a semiconductor static random access memory (SRAM) is described. In one example, a first set or group or stage of SRAM banks are coupled to a first data bus formed using bit line pairs, and a second set or group or stage of SRAM banks are coupled to a second data bus formed using other bit line pairs. The number of banks coupled to each bit line pair is determined by the SRAM&#39;s operating frequency and size. Each data bus is coupled to a sense amplifier. The output from the sense amplifier is then coupled to the bit line pair of a group of SRAM banks. This adjacent group has staging logic coupled to each SRAM bank to store the output of the SRAM bank until the contents from the first group is placed on the bit line of the adjacent stage of SRAM banks. The output from either the first stage or from one of the SRAM banks in the adjacent stage&#39;s SRAM banks, which had been stored in the adjacent stage&#39;s staging logic, is driven to the sense amplifier coupled to the adjacent stage. Successive stages of SRAM banks can be coupled together until an arbitrary number of stages of SRAM banks have been coupled together.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.10/412,566, filed Apr. 11, 2003, now U.S. Pat. No. 7,327,597, entitled“STATIC RANDOM ACCESS MEMORY ARCHITECTURE”, which claims the benefitunder 35 U.S.C. 119(e) of U.S. provisional patent application Ser. No.60/416,013, filed Oct. 2, 2002, entitled “STATIC RANDOM ACCESS MEMORYARCHITECTURE,” the disclosure of which is hereby incorporated byreference in its entirety.

TECHNICAL FIELD

This application relates, in general, to semiconductor memories. Morespecifically, it relates to static random access memory (SRAM).

BACKGROUND

An SRAM semiconductor memory is typically comprised of a plurality ofmemory cells, each memory cell having, for example, four to sixtransistors. Generally, each memory cell is coupled to a column and rowselect line which is used to select the individual memory cell, and eachmemory cell receives its input and drives its output onto a pair ofsense lines, typically designated sense and sense complement. Forpurposes of this description, this pair of sense lines (sense and sensecomplement) shall be called the bit line pair. To read each memory cell,the voltage differential on the bit line pair must be sensed. Reducingthe voltage differential on the bit line pair to the minimum levelneeded to reliably sense the memory cell's content reduces powerconsumption in the SRAM.

FIG. 1 is a block diagram of the internal structure of a typical 1024 by4-bit SRAM. The SRAM array 20 consists of four blocks 22 of 64 words by16 bits each. During a read operation, the high-order 6 bits of theaddress (A4 through A9) select one of 64 words. Four groups of 16 bitseach emerge from the storage array, one group for each of the possibledata bits. The four low-order address bits (A0 through A3) select one of16 bits from each of the four groups to form the 4-bit data word. Writesare similar, except with data flowing in the opposite direction.

This form of two-dimensional decode, with row and column decoders 24,26, is used universally in memory components. Not only does it keep thememory array square, it also limits the longest lines in the decoders.Although the illustrated SRAM provides a 4-bit data word, the width ofthe data word is now more typically 16-bit or 32-bit, and 64-bit dataword SRAM is also commercially available.

It is known to fabricate large SRAMs from a plurality of smaller,modules that each individually comprise a fully operational SRAM memory,such as the module 20 shown in FIG. 1. These individual SRAM units maybe referred to each as a “bank.”

Although the memory cells of an SRAM do not need to be continuallyrefreshed, as do those of a dynamic random access memory (DRAM), thenumber of transistors used for each cell to provide a single memory bitresults in a large amount of integrated circuit (IC) area to implement alarge SRAM. As SRAM also operates faster than DRAM, SRAM is typicallyused as a cache memory for the microprocessor, although SRAM cachememories are typically relatively small in size.

In addition to the issues associated with increases in size of SRAMs,microprocessor clock speeds have increased which have increased theclock frequencies of SRAMs. As recognized by the present inventors, theincreasing size and speed issues of SRAMs has made the design ofconventional SRAM memories problematic. For instance, a certain amountof time is need to drive the bit line pair differential voltage signal,the time being needed to allow for the needed voltage differential topropagate through the length of the bit line pair and reliably indicatethe value in the memory cell. Known complementary metal oxidesemiconductor (CMOS) fabrication, and operation techniques for SRAM, maypre-charge the bit line pair to reduce the amount of time required togenerate and propagate this differential signal. This pre-chargingoccurs with each clock cycle.

At some combination of SRAM size and frequency of operation, the lengthof the bit line pair becomes a problem, as recognized by the presentinventor. In particular, the propagation delay of the voltagedifferential through the bit line pair becomes large enough so as toprevent reliable detection of the contents of the addressed memory cellin the available time.

Conventionally, combining many separate SRAM units or “banks” into onelarge SRAM has been used to provide SRAM memories with greater storagecapacity. Referring to FIG. 2 and in a large, multiple bank SRAM design30, the output from each bank 32-46 is coupled to a MUX 48 having anoutput 50 which forms the final output of the SRAM 30. In oneimplementation of the design shown in FIG. 2, full-rail signals withCMOS buffers are driven from the SRAM banks to a static CMOS MUX. Afull-rail signal swings across the entire voltage range available to itto generate the requisite logic 0 and logic 1 values. Although a singleline (i.e. 52) is shown coupling the banks 32-46 to the MUX 50 in FIG.2, each of these single lines 52-64 actually comprises N wire tracks,where N is the number of bits in the data word. Thus, if the data wordis 16-bits wide, each bank 32-46 would require 16 wire tracks to coupleit to the MUX 48. The total number of wire tracks is determined by thenumber of banks of SRAM memory cells multiplied by the number of databits. In a large SRAM, comprised of many banks, this arrangement quicklyconsumes IC real estate available for wire tracks.

Another known implementation of this MUX function for multiple SRAMbanks uses a shared pair of pre-charged, low swing wires that are drivenwith NMOS true/complement devices/drivers and received by a senseamplifier circuit. FIG. 3 illustrates this second implementation 70,wherein a plurality of banks 72-90 each having a driver (not shown) arecoupled with a sense amp 92 over a bit line pair 93. The output 94 ofthe sense amp 92 provides the output of the memory structure 70.

The number of wire tracks that this approach uses is two times thenumber of data bits (i.e. for each data bit, there is one pair 93provided). This approach saves power over the implementation of FIG. 2and reduces the total number of wire tracks. This implementation islimited, however, by the amount of differential signal that can bedriven over the length of wire necessary to couple the banks of memorycells to the sense amplifier. At some point, depending on the physicalsize and frequency of operation of the SRAM 70 shown in FIG. 3, the bitline pairs running from the SRAM banks will be too long to allow theproper voltage differential to propagate reliably in the time available.To maximize the number of banks that can be coupled to a single senseamplifier, the sense amplifier 92 is placed in the center of the lengthof the bit line pair 93. In normal operation, one half of the clockcycle is used to drive the signal onto the bit line pair and the otherhalf of the cycle is used to pre-charge the pair. One piece of data istransmitted from the driver to the sense amplifier during each clockcycle.

A drawback of the implementation of FIG. 3 is that once the number ofbanks has increased beyond a certain point, the length of the bit linepair 93 has increased too much to allow the differential signal topropagate through its length in the time available, preventing the senseamplifier 92 from reading the differential signal reliably. In thisexample, the exact number of banks and the maximum length of the bitline pair 93 that will work reliably with the banks are related to theclock frequency of the SRAM 70.

As the number of SRAM banks is increased, the length of the bit linepair 93 cannot simply be increased to connect to these additional SRAMbanks, for the reasons previously discussed. Extra bit line pairsections will be needed and the output of these additional sectionscombined in an additional, second sense amplifier. This variation isillustrated in FIG. 4, wherein a first plurality of banks are coupledwith a first sense amp, a second plurality of banks are coupled with asecond sense amp, and the first and second sense amp drive a third senseamp which provides the output of the memory structure.

The implementation of FIG. 4 functions essentially as a multi-level MUX,implemented with shared low swing bit line pairs and sense amplifiers asopposed to the CMOS buffers, wires and CMOS MUX of the implementation ofFIG. 2. In the variant 100 shown in FIG. 4, as two low swing bit linepairs 102, 104 are used in series, two clock cycles are needed totransport data from the banks to the output. Further, the necessarynumber of wire tracks doubles at each level of the SRAM hierarchy, whichhas obvious scaling difficulties.

As recognized by the present inventor, what is needed is an SRAMarchitecture that can operate reliably at high clock frequencies andthat can be expanded in size without allocating excessive IC real estatefor wire tracks.

It is against this background that various embodiments of the presentinvention were developed.

SUMMARY OF THE INVENTION

In light of the above and according to one broad aspect of oneembodiment of the present invention, disclosed herein is an architecturefor a static random access memory. In a first embodiment of the presentinvention, sense amplifiers are located at the end of the bit line pairswhich couple groups of SRAM banks together. In one example, each bitline pair has the maximum length permitted by the propagation delay ofthe differential signal and the SRAM's clock frequency. The output froma given sense amplifier is driven onto a bit line pair coupling aneighboring group of SRAM banks together.

In one example, staging logic in the neighboring group of SRAM bankstemporarily stores the output from these adjacent SRAM banks. Once theoutput from the first group of SRAM banks has been driven onto the bitline pair of the adjacent group of SRAM banks, either that output or theoutput of one of the banks of the adjacent group will be sent to thesense amplifier coupled to the bit line pair coupled to the next groupof SRAM banks. In this manner, the output of each preceding group ofSRAM banks is cascaded to the next group of SRAM banks until the finalgroup of SRAM banks is reached.

This architecture can be readily expanded to an arbitrary number ofgroups of SRAM banks. The number of staging logic elements requiredincreases as the number of banks increases, but these staging logicelements generally require less IC area than wire tracks.

According to another broad aspect of an embodiment of the presentinvention, disclosed herein is a memory for use in a router. In oneexample, the memory includes a first data bus, a first plurality ofbanks of SRAM, a first differential sense amplifier, a first outputdriver, a second data bus, a second plurality of banks of SRAM, a seconddifferential sense amplifier, and a second output driver.

In one embodiment, the first plurality of SRAM banks is coupled with thefirst data bus, and each bank of said first plurality of SRAM banks hasa driver associated therewith for selectively driving a first set ofdata signals from the first plurality of banks onto the first data bus.The first differential sense amplifier receives the first set of datasignals over the first data bus, and the first output driver, being incommunications with the first differential sense amp, selectively drivesthe first set of data signals. The second data bus may be coupled withthe first output driver for receiving the first set of data signals, andthe second plurality of banks of SRAM is coupled with the second databus. Each bank of said second plurality of banks has a driver associatedtherewith for selectively driving a second set of data signals from thesecond plurality of SRAM banks onto the second data bus. Further, eachbank of said second plurality of banks may have one or more logic gatesfor temporarily storing the second set of data signals. The seconddifferential sense amplifier is coupled with the second data bus, andthe second output driver is in communications with the seconddifferential sense amp for selectively driving either the first set ofdata signals or the second set of data signals.

In another embodiment, the memory may include a third data bus coupledwith the second output driver for receiving the first set of datasignals or the second set of data signals. A third plurality of banks ofSRAM may be coupled with the third data bus, each bank of said thirdplurality of banks having a driver associated therewith for selectivelydriving a third set of data signals from the third plurality of banksonto the third data bus, and each bank of said third plurality of bankshaving one or more logic gates for temporarily storing the third set ofdata signals. A third differential sense amplifier may be coupled withthe third data bus, and a third output driver may be in communicationswith the third differential sense amp for selectively driving either thefirst set of data signals, the second set of data signals, or the thirdset of data signals.

In one example, each data bus includes one or more sets of shared,differential pair bit lines. For instance, each data bus may includethirty-two sets of shared, differential pair bit lines in order toprovide a thirty-two bit data word from the memory. Preferably, eachSRAM bank provides a data word onto its respective data bus.

In one example, the memory may include a first latch coupled with thefirst differential sense amplifier for latching a state of the firstdifferential sense amplifier, and a second latch may be coupled withsaid second differential sense amplifier for latching a state of thesecond differential sense amplifier. For instance, these latches may bereset-set latches.

In one example, the one or more logic gates for temporarily storing thesecond set of data signals may include one or more flip flops forstoring the second set of data signals at least one clock cycle. The oneor more logic gates for temporarily storing the third set of datasignals may include one or more flip flops for storing the third set ofdata signals at least two clock cycles.

In one embodiment, each SRAM bank may include an row address decoder, acolumn address decoder, and a storage matrix, the row address decoderand said column address decoder for accessing data located in thestorage matrix.

The features, utilities and advantages of various embodiments of theinvention will be apparent from the following more particulardescription of embodiments of the invention as illustrated in theaccompanying drawings.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a single SRAM bank.

FIG. 2 shows a multi-bank SRAM architecture.

FIG. 3 shows another multi-bank SRAM implementation.

FIG. 4 illustrates a variant of the multi-bank SRAM implementation shownin FIG. 3.

FIG. 5 illustrates a memory architecture in accordance with anembodiment of the present invention.

FIG. 6 illustrates another embodiment of the present inventionimplemented with two groups of two SRAM banks.

FIG. 7 illustrates another embodiment of the present inventionimplemented with an arbitrary number of SRAM banks.

DETAILED DESCRIPTION

According to one broad aspect of the invention, disclosed herein is amemory which may be used in a router. In one example, the memoryincludes a first data bus, a first plurality of banks of SRAM coupledwith the first data bus, a first differential sense amplifier receivingthe first data bus, and a first output driver receiving the output ofthe first differential sense amp. The first output driver selectivelydrives the signal from the first data bus onto a second data bus whichhas a second plurality of banks of SRAM coupled thereto. A seconddifferential sense amplifier receives the second data bus (as well asthe first data bus through the first output driver), and a second outputdriver selectively drives an output signal which may include data fromthe first data bus or the second data bus. The memory may be expanded byadding additional data buses coupled with additional SRAM banks. Staginglogic or logic gates may be used to temporarily store data from SRAMbanks associated with the second and/or subsequent data buses. Variousembodiments of the invention will now be discussed.

An embodiment of the present invention is shown in FIG. 5. In oneexample, a memory 110 includes a bit line pair 112 coupled with one ormore SRAM banks 114, 116, 118, 120, herein denoted bank 0 through bank 3in this example. In one example, each SRAM bank 114-120 may include anrow address decoder, a column address decoder, and a storage matrix, therow address decoder and said column address decoder for accessing datalocated in the storage matrix. FIG. 1 is one example of an SRAM bank114-120; however, other types of SRAM banks may also use used.

Preferably, each SRAM bank 114-120 is provided with one or more driversto drive a differential signal representative of the data stored in theSRAM memory bank 114-120. At the end of this series of SRAM banks, bitline pair 112 is coupled with sense amplifier 122. Although the numberof banks used is a matter of choice depending on the particularimplementation, in one example, the exact number of banks that arecoupled to a single bit line pair is determined by the operatingfrequency of the SRAM, the size of the SRAM needed, and the voltagedifferential needed to reliably detect stored information.

The output of sense amplifier 122 is coupled to a second bit line pair124 that couples an adjacent one or more SRAM banks 126, 128, 130, 132.These SRAM banks (shown as bank 4 to bank 7 in this example) are, in oneexample, each provided with a staging logic element or logic gates 134,and may each be provided with one or more drivers (not shown). Thesestaging logic sections 134 store the output of the SRAM bank they arecoupled with. The staging logic elements 134 in this embodiment of thepresent invention acts as temporary storage elements, but additionalbuffering, processing and amplification could also be performed by thestaging logic 134, if necessary.

In FIGS. 5, 112 and 124 represent data buses that may be formed from oneor more sets of shared, differential bit line pairs. In one example, toprovide 32 bits of data per data word, 32 sets of bit line pairs areprovided at 112 and 124, and accordingly, sense amps 122 and 138 eachreceive these 32 sets of bit line pairs (or a plurality of sense ampsmay be provided as 122/138).

The final output of the bit line pair 124 coupling the second group ofSRAM banks (i.e., bank 4-bank 7) is coupled to an output register 136through sense amplifier 138.

During operation, one of the SRAM banks 114-120 or 126-132 is selectedto provide its data on the bit line pairs 112, 124 (i.e., drive the bitline pair). Depending upon which SRAM bank has been selected to providethe final output, either the output of sense amplifier 122 or thecontents of one of the staging logic elements 134 (corresponding to oneof bank 4, bank 5, . . . bank 7) will be provided to sense amplifier 138and then to output 136.

For purposes of this description, it is helpful to think of each groupof SRAM banks and associated bit line pair as a stage (i.e., bank 0 tobank 3 with bit line pair 112 forming a first stage 140; and bank 4 tobank 7 with bit line pair 124 forming a second stage 142, in thisexample).

There is a certain amount of delay as data from the preceding groups ofSRAM banks transits through each successive group of SRAM banks. Foreach successive stage (i.e., the second stage 142), an additional levelof staging logic elements will be needed compared to the prior stage(i.e. stage 140). For example, if data from the first SRAM stage 140requires one clock cycle to transit the next SRAM stage 142, the staginglogic elements for the second stage 142 will need to store the output ofthe second stage's 142 SRAM banks 126-132 for one clock cycle. If therewere three SRAM stages, the staging logic elements in the third stagewould need to store the output of the third stage's SRAM banks for twoclock cycles. Logic circuits, typically flip-flops or gates of one typeor another, can be used to perform this needed temporary storage.

FIG. 6 shows another example of a memory 150 of an embodiment of thepresent invention. Two SRAM banks 152 and 154 are coupled to a bit linepair 156, forming first SRAM stage 158. Drivers 160, 162 selectivelydrive the data from their respective SRAM banks 152, 154 onto data bus156.

In turn, bit line pair 156 is coupled to sense amplifier 164, the outputof which is provided to a latch 166 (such as a Reset-Set latch) and adriver 168. The output of driver 168 is in turn coupled to bit line pair170 of an adjacent SRAM stage 172 comprised of SRAM banks 174 and 176.In second stage 172 having SRAM banks 174 and 176, staging logic 178(comprised of staging flip-flops in one example) stores the output ofSRAM banks 174 and 176, respectively.

Drivers 180, 182 selectively drive the data from their respective SRAMbanks 174, 176 onto data bus 170.

In operation, after the output from first SRAM stage 158 is captured bylatch 166, the contents present at latch 166 (driven by driver 168), orthe contents of either SRAM bank 170 or 176 (stored in stagingflip-flops 178 until the output of sense amplifier 164 had been placedin latch 166) are sent to sense amplifier 184, which supplies it to R-Slatch 186. In turn, latch 186 generates an output 188, which may includea flip-flop.

The addition of further stages of SRAM banks requires staging logic ofincreasing size, to provide the requisite temporary storage. Althoughthis staging logic does require some IC area, it generally requires lessoverall than the wire tracks of SRAM designs shown in FIGS. 1-4. Even ifthe area required were greater, the layout of this logic is relativelysimple, compared to routing wire tracks over greater lengths. Also, thecapacitance of long wire tracks can begin to sink significant amounts ofpower, which staging logic does not.

In one example, each driver 160, 162, 168, 180, 182 may be provided withan enable/disable control which may be coupled with the appropriateaddressing logic or circuitry so that a particular SRAM bank may beselected for providing data onto the data bus 156, 170 during aparticular clock cycle.

Preferably, only one SRAM bank 152, 154, 174, 176 is active to drive itsdata onto the differential data bus 156, 170. In one example, eachdriver of each SRAM bank has addressing circuitry coupled thereto forselecting, enabling, or activating the output of a particular SRAM bankto be sent to or driven on to the data bus. Further, the driver of eachsection (i.e., driver 168 of section 158) may also be coupled with theaddressing circuitry so that if a particular SRAM bank coupled with thesection (i.e., bank 154 of section 158) associated with the driver, orany SRAM bank associated with a prior section coupled with the data busof the present section, is selected, then the driver will be activatedso as to pass the data present on the data bus down to the followingsections.

For instance, in the example of FIG. 6, assume that SRAM bank 154 hasbeen selected for placing data on the data bus 156 during a particularcycle, then the remaining SRAM banks 152, 174, and 176 are alldeselected (i.e., the drivers 160, 180, 182 of each of these SRAM banksmay be placed in a tri state high impedance mode). Because an SRAM bankassociated with driver 168 is active, accordingly, driver 168 is alsoactive/enabled so that driver 168 drives the data on data bus 156 ontodata bus 170. In another example, assuming that data from SRAM bank 174is selected for a particular clock cycle, then drivers 160, 162associated with SRAM banks 152 and 154 are deselected (along with driver168) and the driver 182 associated with SRAM bank 176 is also deselectedso that the driver 180 for SRAM bank 174 is able to control the state ofthe data bus 170 during the cycle.

Referring to FIG. 6, in one example, when the clock is low, the data bus156, 170 may be pre-charged, and on a rising clock edge, the selecteddrivers which are activated apply data to the data bus. On a fallingclock edge, the sense operation occurs. Accordingly, referring to FIG.6, assume that during clock cycle 1, data A0 is associated with SRAMbank 152, data A1 is associated with SRAM bank 154, data A2 isassociated with SRAM bank 174, and data A3 is associated with SRAM bank176.

In general, during cycle 1, clock high, the data from one of the SRAMbanks is driven onto one of the shared data buses, for instance, data A0from SRAM bank 152, data A1 from SRAM bank 154. Data A2 from SRAM bank174 and data A3 from SRAM bank 176 are both stored in their respectivestaging logic 178 during cycle 1, clock high. During cycle 1, clock low,sense amp 164 senses data from either SRAM bank 152 or 154 (i.e., dataA0 or A1) and if there is any data from either SRAM bank 152 or 154,then during cycle 2, clock high, driver 168 drives that data (i.e., dataA0 or A1) onto shared data bus 170. This data is sensed by sense amp 184during cycle 2, clock low, and latched as well by latch 186 and isoutput during cycle 3, clock high.

Data A2 from SRAM bank 174 and data A3 from SRAM bank 176 are stored inthe staging flip flops 178 of each of these SRAM banks for an additionalcycle, in one example, so that during cycle 2, clock high, the data atSRAM bank 174 stored in staging flip flop 178 can be driven onto the bus170. For example, if SRAM bank 174 is selected, then at cycle 2, clocklow, the sense amp 184 detects the data A2 and it is latched by latch186 and output at cycle 3, clock high.

For instance, assume that SRAM bank 154 has been selected to drive thedata bus 156 during cycle 1. Accordingly, when the clock is high duringcycle 1, the driver associated with SRAM bank 154 applies data A1 to thedata bus 156. When the clock goes low during cycle 1, sense amp 164detects the data A1, and this data is latched by latch 166 and driven onthe next rising edge (i.e., during cycle 2 clock high) onto the nextdata bus 170. During cycle 2, clock low, sense amp 184 senses the dataA1 which is latched by latch 186 and driven through output gates or flop188 during cycle 3, clock high.

FIG. 7 shows another embodiment of the present invention expanded intoan SRAM 190 of N groups of SRAM banks. The construction and operation isidentical to that of the embodiment shown in FIG. 6 with the addition ofadditional elements needed to replicate the design to N sections. For Nstages, as shown in FIG. 7, N-M staging flip-flops logic are used forthe Mth stage's SRAM banks, in one example. For instance, for 3 stages,the first stage may have 2 staging flops/logic to store data for 2cycles; the second stage may have 1 staging flop/logic to store data for1 cycle. As shown in FIG. 7, the data may flow through the memory in asimilar manner as described above with reference to FIG. 6.

Accordingly, it can be seen that a memory could be formed of a pluralityof sections, wherein each section has a plurality of banks coupled witha shared data bus being received by a sense amplifier, and these varioussections can be interconnected through drivers so that the data from aparticular SRAM bank can be selectively placed on the data buses andprovided or made available to circuits external to the memory. In thisway, it can be seen that the memory architecture shown in the variousembodiments of FIGS. 5-7 can support a large number of SRAM banks andsupport a large amount of memory.

Further, one or more of the embodiments described herein may be usedwithin a device or apparatus such as a router or computer. One exampleof a router is described in co-pending application Ser. No. 10/177,496entitled “Packet Routing and Switching Device” filed Jun. 20, 2002, thedisclosure of which is incorporated herein by reference in its entirety.

While the methods disclosed herein have been described and shown withreference to particular operations performed in a particular order, itwill be understood that these operations may be combined, sub-divided,or re-ordered to form equivalent methods without departing from theteachings of the present invention. Accordingly, unless specificallyindicated herein, the order and grouping of the operations is not alimitation of the present invention.

While the invention has been particularly shown and described withreference to various embodiments thereof, it will be understood by thoseskilled in the art that various other changes in the form and detailsmay be made without departing from the spirit and scope of theinvention.

1. A memory for use in a network device, the memory comprising: a staticrandom access memory (SRAM) that includes at least one SRAM bank thatincludes a driver associated therewith, the at least one SRAM bankcoupled to at least two bit line pairs that are coupled to at least onesense amplifier, wherein the at least two bit line pairs are adjacentand coupled together successively and in a hierarchy, to place an outputof one of the bit line pairs on an adjacent bit line pair via the atleast one sense amplifier.
 2. The memory of claim 1, wherein the atleast one SRAM bank is part of an adjacent plurality of coupled SRAMbanks.
 3. The memory of claim 1, wherein the at least one SRAM bank haslogic which stores an output of the at least one SRAM bank for a periodof time necessary for the output of a preceding coupled SRAM bank totraverse the at least two bit line pairs.
 4. The memory of claim 3,wherein the output is placed on the at least two bit line pairs attachedto a next successively coupled SRAM bank.
 5. A memory for use in anetwork device, the memory comprising: a first data bus; at least onebank of static random access memory (SRAM) that is coupled to a firstdifferential sense amplifier to receive a first set of data signals overthe first data bus; a first output driver in communications with thefirst differential sense amplifier to selectively drive the first set ofdata signals; a second data bus coupled with the first output driver toreceive the first set of data signals; and a second bank of SRAM, toselectively drive a second set of data signals from the second bank ontothe second data bus.
 6. The memory of claim 5, further comprising: asecond differential sense amplifier coupled with the second data bus;and a second output driver in communications with the seconddifferential sense amplifier to selectively drive either the first setof data signals or the second set of data signals.
 7. The memory ofclaim 6, further comprising: a third data bus coupled with the secondoutput driver to receive the first set of data signals or the second setof data signals; a third bank of SRAM that includes a driver associatedtherewith to selectively drive a third set of data signals from thethird bank of SRAM onto the third data bus; a third differential senseamplifier coupled with the third data bus; and a third output driver incommunications with the third differential sense amplifier toselectively drive at least one of the first set of data signals, thesecond set of data signals, and the third set of data signals.
 8. Thememory of claim 5, wherein the first data bus includes one or more setsof shared, differential pair bit lines.
 9. The memory of claim 5,wherein the first data bus includes thirty-two sets of shared,differential pair bit lines in order to provide a thirty-two bit dataword.
 10. The memory of claim 5, wherein each bank of the at least onebank of SRAM provides a data word onto the first data bus.
 11. Thememory of claim 5, further comprising a first latch coupled with thefirst differential sense amplifier to latch a state of the firstdifferential sense amplifier.
 12. The memory of claim 11, wherein thefirst latch is a reset-set latch.
 13. The memory of claim 6, furthercomprising a second latch coupled with the second differential senseamplifier to latch a state of the second differential sense amplifier.14. The memory of claim 7, further comprising a third latch coupled withthe third differential sense amplifier to latch a state of the thirddifferential sense amplifier.
 15. The memory of claim 6, wherein thesecond bank of SRAM includes one or more logic gates to temporarilystore the second set of data signals, such one or more logic gatesincluding one or more flip flops to store the second set of data signalsfor at least one clock cycle.
 16. The memory of claim 5, wherein the atleast one bank of SRAM includes a row address decoder, a column addressdecoder, and a storage matrix, the row address decoder and the columnaddress decoder being to access data located in the storage matrix. 17.A memory for use in a network device, the memory comprising: a pluralityof static random access memory (SRAM) banks, each SRAM bank comprisingan SRAM memory of predetermined data word width; a first bit line dataword bus, a predetermined number of SRAM banks being coupled to thefirst bit line data word bus; a first sense amplifier coupled to thepredetermined number of SRAM banks via the first bit line data word busand having an output; at least a second plurality of SRAM banks; atleast a second bit line data word bus, the second bit line data word busbeing coupled with the output of the first sense amplifier; staginglogic coupled to each of the second plurality of SRAM banks coupled tothe second bit line data word bus; at least a second sense amplifiercoupled to the second bit line data word bus; and an output stagecoupled to the second sense amplifier to store and provide the output ofthe first and second SRAM banks.
 18. The memory of claim 17, whereineach SRAM bank of the plurality of banks provides a data word onto thefirst bit line data word bus.